YARIMO’TKAZGICHLI GaAs LAZERINING SHOVQIN XARAKTERISTIKASI
Ключевые слова:
Millivoltmetr,ossillograf,regulirovka,shovqin zichligi lazer diodining volt-amper xarakteristikasi, nurlanish,fotoelektronko’paytirgich.Аннотация
Tajriba ish rejimida lazerlarda shovqin zichligini o’lchashga asoslangan. Yarimo’tkazgichli GaAs turdagi lazerlarga nurlanish ta’sirini o’rganish maqsadida eksperimental qurilma yig’ilgan va ushbu laboratoriya ishida radiatsion muhit sifatida atrof-muhitdan kelayotgan nurlanishlar maydoni tanlandi. Tajribada yarimo’tkazgichli GaAs lazerining xarakteristikalari o’rganildi va tadbiq etildi.
Библиографические ссылки
Кейси Х., Паниш М. Лазеры на гетероструктурах, М., Мир, 1981.
Barnes, C. E. The effects of radiation on optoelectronic devices. In Fiber Optics in Adverse Environments III; Greenwell, Roger A., Ed., Proc. SPIE Vol. 721; pp 18-25 (1987).
Eerkens I. W., Lee W. W. Conf. on Lazers and Electrooptics, Poster session. 1985y.
Gover.J.E;Srour;J.R.’’Basic radition effects in nuclear power electronics technology,’’ SAND85-0776,Sandia National Laboratories,May 1985.
