YARIMO’TKAZGICHLI GaAs LAZERINING SHOVQIN XARAKTERISTIKASI

Authors

  • Axmadjonov Turg’unali f.m.f.d.
  • Yo’lchiyeva Farog’at Ikromjon qizi UZBEKISTAN

Keywords:

Millivoltmetr,ossillograf,regulirovka,shovqin zichligi lazer diodining volt-amper xarakteristikasi, nurlanish,fotoelektronko’paytirgich.

Abstract

Tajriba ish rejimida lazerlarda shovqin zichligini o’lchashga asoslangan. Yarimo’tkazgichli  GaAs turdagi lazerlarga nurlanish ta’sirini o’rganish maqsadida eksperimental qurilma yig’ilgan va ushbu laboratoriya ishida radiatsion muhit sifatida atrof-muhitdan kelayotgan nurlanishlar maydoni tanlandi. Tajribada yarimo’tkazgichli GaAs lazerining xarakteristikalari o’rganildi va tadbiq etildi.

References

Кейси Х., Паниш М. Лазеры на гетероструктурах, М., Мир, 1981.

Barnes, C. E. The effects of radiation on optoelectronic devices. In Fiber Optics in Adverse Environments III; Greenwell, Roger A., Ed., Proc. SPIE Vol. 721; pp 18-25 (1987).

Eerkens I. W., Lee W. W. Conf. on Lazers and Electrooptics, Poster session. 1985y.

Gover.J.E;Srour;J.R.’’Basic radition effects in nuclear power electronics technology,’’ SAND85-0776,Sandia National Laboratories,May 1985.

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Published

2022-05-10